TPN22006NH,LQ Vidiny (USD) [293170pcs Stock]
- 1 pcs$0.13947
- 3,000 pcs$0.13878
- Ampahany:
- TPN22006NH,LQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Famaritana antsipirihany:
- MOSFET N CH 60V 9A 8-TSON.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - JFET, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - FETs, MOSFETs - Single, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Tratrao - SCR - Modules, Ny kristianao - SCR and Transistorio - Bipolar (BJT) - Arrays, mialoha ali ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Toshiba Semiconductor and Storage TPN22006NH,LQ electronic components. TPN22006NH,LQ can be shipped within 24 hours after order. If you have any demands for TPN22006NH,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN22006NH,LQ Toetran'ny vokatra
Ampahany :
TPN22006NH,LQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N CH 60V 9A 8-TSON
Series :
U-MOSVIII-H
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
9A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
6.5V, 10V
Rds On (Max) @ Id, Vgs :
22 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
710pF @ 30V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
700mW (Ta), 18W (Tc)
Ny mari-pana :
150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-TSON Advance (3.3x3.3)
Famonosana / tranga :
8-PowerVDFN
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