IPD65R650CEAUMA1 Vidiny (USD) [210918pcs Stock]
- 1 pcs$0.17536
- 2,500 pcs$0.14383
- Ampahany:
- IPD65R650CEAUMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 650V 7A TO-252.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Transistors - FET, MOSFET - RF, Diodes - Zener - Iray, Ny kristianao - SCR, Modules maotera mpamily, Transistors - Bipolar (BJT) - RF, Transistors - JFET and Transistors - FETs, MOSFETs - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPD65R650CEAUMA1 electronic components. IPD65R650CEAUMA1 can be shipped within 24 hours after order. If you have any demands for IPD65R650CEAUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD65R650CEAUMA1 Toetran'ny vokatra
Ampahany :
IPD65R650CEAUMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 650V 7A TO-252
Series :
CoolMOS™ CE
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
7A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
440pF @ 100V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
86W (Tc)
Ny mari-pana :
-40°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO252-3
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63
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