Infineon Technologies - IRLHS6342TRPBF

KEY Part #: K6421211

IRLHS6342TRPBF Vidiny (USD) [394804pcs Stock]

  • 1 pcs$0.09369
  • 4,000 pcs$0.08092

Ampahany:
IRLHS6342TRPBF
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 30V 8.7A PQFN.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Diode - Mpitaovana - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, mialoha alik, Tratrao - TRIACs, Transistors - IGBTs - Tafidina, Transistors - Bipolar (BJT) - Single and Diode - Zener - Arrays ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLHS6342TRPBF Toetran'ny vokatra

Ampahany : IRLHS6342TRPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 30V 8.7A PQFN
Series : HEXFET®
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 8.7A (Ta), 19A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 15.5 mOhm @ 8.5A, 4.5V
Vgs (th) (Max) @ Id : 1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Vgs (Max) : ±12V
Fampiasana masinina (Ciss) (Max) @ Vds : 1019pF @ 25V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 2.1W (Ta)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : 6-PQFN (2x2)
Famonosana / tranga : 6-PowerVDFN