Toshiba DTMOSVI Series MOSFETs

Author : Toshiba semiconductors Published Time : 2018-09-12
Toshiba DTMOSVI Series MOSFETs offer a low drain-source on-resistance (RDS(ON)= 0.033 Ω (typ.)). These devices have a drain-source voltage of 650V with a drain current of 57A. The DTMOSVI Series MOSFETs offer high speed switching properties with lower capacitance. These MOSFETs are ideal for use in switching power supply applications.

Specifications

Drain-Source Voltage (VDSS): 650VGate-Source Voltage (VGSS): ±30Drain current (DC) (ID) @ Tc = 25°C: 57ADrain current (pulsed) (IDP) 228APower dissipation (PD): 360WDrain Source On-Resistance (RDS(ON)) @ VGS = 10V, ID = 28.5A: 0.033Ω (typ.)

Applications

Switching Power Supplies
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