SI2312BDS-T1-GE3 Vidiny (USD) [529776pcs Stock]
- 1 pcs$0.06982
- 3,000 pcs$0.06317
- Ampahany:
- SI2312BDS-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 20V 3.9A SOT23-3.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Mpitaovana - Arrays, Transistor - Unjunction Programmable, Ny kristianao - SCR, Diodes - Rectifiers Bridge, Diode - Zener - Arrays, Ny thyristors - DIAC, SIDACs, Diodes - Miova endrika ny habeny (varicaps, varact and Transistorio - Bipolar (BJT) - Arrays, mialoha ali ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI2312BDS-T1-GE3 electronic components. SI2312BDS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2312BDS-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2312BDS-T1-GE3 Toetran'ny vokatra
Ampahany :
SI2312BDS-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 20V 3.9A SOT23-3
Series :
TrenchFET®
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
3.9A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
31 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id :
850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 4.5V
Vgs (Max) :
±8V
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
750mW (Ta)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
SOT-23-3 (TO-236)
Famonosana / tranga :
TO-236-3, SC-59, SOT-23-3
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