SIZF300DT-T1-GE3 Vidiny (USD) [166378pcs Stock]
- 1 pcs$0.22231
- Ampahany:
- SIZF300DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET DUAL N-CHAN 30V PPAIR 3X3.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Modules, Transistorio - Bipolar (BJT) - Arrays, Transistor - FET, MOSFET - Arrays, Tratrao - SCR - Modules, Transistors - IGBTs - tokan-tena, Transistor - Unjunction Programmable, Transistors - Bipolar (BJT) - Single and Tratrao - TRIACs ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SIZF300DT-T1-GE3 electronic components. SIZF300DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZF300DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZF300DT-T1-GE3 Toetran'ny vokatra
Ampahany :
SIZF300DT-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET DUAL N-CHAN 30V PPAIR 3X3
Series :
TrenchFET® Gen IV
Ampahany :
Active
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Standard
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
Rds On (Max) @ Id, Vgs :
4.5 mOhm @ 10A, 10V, 1.84 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V, 62nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
1100pF @ 15V, 3150pF @ 15V
Hery - Max :
3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-PowerWDFN
Package Fitaovana mpamatsy :
8-PowerPair® (6x5)
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