PMDPB58UPE,115 Vidiny (USD) [478369pcs Stock]
- 1 pcs$0.07732
- 3,000 pcs$0.06743
- Ampahany:
- PMDPB58UPE,115
- Manufacturer:
- Nexperia USA Inc.
- Famaritana antsipirihany:
- MOSFET 2P-CH 20V 3.6A HUSON6.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny kristianao - SCR, Diodes - Rectifiers Bridge, Ny thyristors - DIAC, SIDACs, Transistors - Bipolar (BJT) - RF, Diodes - RF, Modules maotera mpamily, Transistors - IGBTs - Modules and Diode - Zener - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Nexperia USA Inc. PMDPB58UPE,115 electronic components. PMDPB58UPE,115 can be shipped within 24 hours after order. If you have any demands for PMDPB58UPE,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMDPB58UPE,115 Toetran'ny vokatra
Ampahany :
PMDPB58UPE,115
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET 2P-CH 20V 3.6A HUSON6
Series :
-
Ampahany :
Active
Type FET :
2 P-Channel (Dual)
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
3.6A
Rds On (Max) @ Id, Vgs :
67 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
9.5nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds :
804pF @ 10V
Hery - Max :
515mW
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
6-UDFN Exposed Pad
Package Fitaovana mpamatsy :
6-HUSON-EP (2x2)
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