Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET 2N-CH 20V 0.5A ES6
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
500mA
Rds On (Max) @ Id, Vgs :
630 mOhm @ 200mA, 5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
1.23nC @ 4V
Fampiasana masinina (Ciss) (Max) @ Vds :
46pF @ 10V
Ny mari-pana :
150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
SOT-563, SOT-666
Package Fitaovana mpamatsy :
ES6 (1.6x1.6)