Infineon Technologies - IPG16N10S4L61AATMA1

KEY Part #: K6525366

IPG16N10S4L61AATMA1 Vidiny (USD) [228629pcs Stock]

  • 1 pcs$0.16178
  • 5,000 pcs$0.14842

Ampahany:
IPG16N10S4L61AATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET 2N-CH 8TDSON.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Unjunction Programmable, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Tratrao - SCR - Modules, Modules maotera mpamily, Transistors - FETs, MOSFETs - Single, Ny thyristors - DIAC, SIDACs, Transistors - JFET and Ny kristianao - SCR ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Infineon Technologies IPG16N10S4L61AATMA1 electronic components. IPG16N10S4L61AATMA1 can be shipped within 24 hours after order. If you have any demands for IPG16N10S4L61AATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPG16N10S4L61AATMA1 Toetran'ny vokatra

Ampahany : IPG16N10S4L61AATMA1
Manufacturer : Infineon Technologies
Description : MOSFET 2N-CH 8TDSON
Series : Automotive, AEC-Q101, OptiMOS™
Ampahany : Active
Type FET : 2 N-Channel (Dual)
Fihetsika FET : Logic Level Gate
Drain to Source Voltage (Vdss) : 100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 16A
Rds On (Max) @ Id, Vgs : 61 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 90µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds : 845pF @ 25V
Hery - Max : 29W
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Surface Mount
Famonosana / tranga : 8-PowerVDFN
Package Fitaovana mpamatsy : PG-TDSON-8-10