Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 900V TO220SIS
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
900V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
7A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2 Ohm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
1350pF @ 25V
Fandroahana herinaratra (Max) :
45W (Tc)
Ny mari-pana :
150°C (TJ)
Package Fitaovana mpamatsy :
TO-220SIS
Famonosana / tranga :
TO-220-3 Full Pack