Infineon Technologies - IPP65R190CFDAAKSA1

KEY Part #: K6417639

IPP65R190CFDAAKSA1 Vidiny (USD) [37177pcs Stock]

  • 1 pcs$1.05173
  • 500 pcs$1.03737

Ampahany:
IPP65R190CFDAAKSA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 650V TO-220-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - JFET, Transistors - Bipolar (BJT) - Single, mialoha alik, Ny thyristors - DIAC, SIDACs, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - FET, MOSFET - RF, Transistors - Bipolar (BJT) - RF, Tratrao - SCR - Modules and Modules maotera mpamily ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Infineon Technologies IPP65R190CFDAAKSA1 electronic components. IPP65R190CFDAAKSA1 can be shipped within 24 hours after order. If you have any demands for IPP65R190CFDAAKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP65R190CFDAAKSA1 Toetran'ny vokatra

Ampahany : IPP65R190CFDAAKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 650V TO-220-3
Series : Automotive, AEC-Q101, CoolMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 17.5A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 7.3A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs : 68nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 1850pF @ 100V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 151W (Tc)
Ny mari-pana : -40°C ~ 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : PG-TO220-3
Famonosana / tranga : TO-220-3

Mety ho liana koa ianao