Toshiba Semiconductor and Storage - TK9A65W,S5X

KEY Part #: K6418118

TK9A65W,S5X Vidiny (USD) [52170pcs Stock]

  • 1 pcs$1.02016
  • 50 pcs$0.82441
  • 100 pcs$0.74196
  • 500 pcs$0.57707
  • 1,000 pcs$0.47815

Ampahany:
TK9A65W,S5X
Manufacturer:
Toshiba Semiconductor and Storage
Famaritana antsipirihany:
MOSFET N-CH 650V 9.3A TO-220SIS.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, mialoha alik, Ny thyristors - DIAC, SIDACs, Tratrao - TRIACs, Diodes - Zener - Iray, Transistor - Unjunction Programmable, Transistors - FET, MOSFET - RF, Diodes - Miova endrika ny habeny (varicaps, varact and Diodes - RF ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK9A65W,S5X Toetran'ny vokatra

Ampahany : TK9A65W,S5X
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 650V 9.3A TO-220SIS
Series : DTMOSIV
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 9.3A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 500 mOhm @ 4.6A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±30V
Fampiasana masinina (Ciss) (Max) @ Vds : 700pF @ 300V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 30W (Tc)
Ny mari-pana : 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : TO-220SIS
Famonosana / tranga : TO-220-3 Full Pack

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