Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 600V 9.7A TO220SIS
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
9.7A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 4.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 360µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
590pF @ 300V
Fandroahana herinaratra (Max) :
30W
Ny mari-pana :
150°C (TJ)
Package Fitaovana mpamatsy :
TO-220SIS
Famonosana / tranga :
TO-220-3 Full Pack