Infineon Technologies - IRFH7911TR2PBF

KEY Part #: K6524120

[3937pcs Stock]


    Ampahany:
    IRFH7911TR2PBF
    Manufacturer:
    Infineon Technologies
    Famaritana antsipirihany:
    MOSFET 2N-CH 30V 13A/28A PQFN.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - JFET, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFET - RF, Tratrao - SCR - Modules, Transistors - Bipolar (BJT) - Single, mialoha alik, Diodes - Miova endrika ny habeny (varicaps, varact, Diode - Zener - Arrays and Diodes - Mpihazakazaka - Iray ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Infineon Technologies IRFH7911TR2PBF electronic components. IRFH7911TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH7911TR2PBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFH7911TR2PBF Toetran'ny vokatra

    Ampahany : IRFH7911TR2PBF
    Manufacturer : Infineon Technologies
    Description : MOSFET 2N-CH 30V 13A/28A PQFN
    Series : HEXFET®
    Ampahany : Obsolete
    Type FET : 2 N-Channel (Dual)
    Fihetsika FET : Logic Level Gate
    Drain to Source Voltage (Vdss) : 30V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 13A, 28A
    Rds On (Max) @ Id, Vgs : 8.6 mOhm @ 12A, 10V
    Vgs (th) (Max) @ Id : 2.35V @ 25µA
    Gate Charge (Qg) (Max) @ Vgs : 12nC @ 4.5V
    Fampiasana masinina (Ciss) (Max) @ Vds : 1060pF @ 15V
    Hery - Max : 2.4W, 3.4W
    Ny mari-pana : -55°C ~ 150°C (TJ)
    Type Type : Surface Mount
    Famonosana / tranga : 18-PowerVQFN
    Package Fitaovana mpamatsy : PQFN (5x6)