Vishay Siliconix - SI1988DH-T1-GE3

KEY Part #: K6524100

[3944pcs Stock]


    Ampahany:
    SI1988DH-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Famaritana antsipirihany:
    MOSFET 2N-CH 20V 1.3A SC-70-6.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Transistors - IGBTs - tokan-tena, Ny kristianao - SCR, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - FET, MOSFET - RF, Transistors - Bipolar (BJT) - Single, Transistor - Tanjona manokana and Transistors - Bipolar (BJT) - RF ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Vishay Siliconix SI1988DH-T1-GE3 electronic components. SI1988DH-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1988DH-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI1988DH-T1-GE3 Toetran'ny vokatra

    Ampahany : SI1988DH-T1-GE3
    Manufacturer : Vishay Siliconix
    Description : MOSFET 2N-CH 20V 1.3A SC-70-6
    Series : TrenchFET®
    Ampahany : Obsolete
    Type FET : 2 N-Channel (Dual)
    Fihetsika FET : Logic Level Gate
    Drain to Source Voltage (Vdss) : 20V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 1.3A
    Rds On (Max) @ Id, Vgs : 168 mOhm @ 1.4A, 4.5V
    Vgs (th) (Max) @ Id : 1V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 4.1nC @ 8V
    Fampiasana masinina (Ciss) (Max) @ Vds : 110pF @ 10V
    Hery - Max : 1.25W
    Ny mari-pana : -55°C ~ 150°C (TJ)
    Type Type : Surface Mount
    Famonosana / tranga : 6-TSSOP, SC-88, SOT-363
    Package Fitaovana mpamatsy : SC-70-6 (SOT-363)

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