Vishay Siliconix - SQ2301ES-T1_GE3

KEY Part #: K6421360

SQ2301ES-T1_GE3 Vidiny (USD) [485597pcs Stock]

  • 1 pcs$0.07617
  • 3,000 pcs$0.06474

Ampahany:
SQ2301ES-T1_GE3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET P-CH 20V 3.9A TO236.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - RF, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Modules maotera mpamily, Transistor - Tanjona manokana, Transistors - Bipolar (BJT) - Single, mialoha alik, Tratrao - SCR - Modules, Ny kristianao - SCR and Transistors - JFET ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Siliconix SQ2301ES-T1_GE3 electronic components. SQ2301ES-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ2301ES-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQ2301ES-T1_GE3 Toetran'ny vokatra

Ampahany : SQ2301ES-T1_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET P-CH 20V 3.9A TO236
Series : Automotive, AEC-Q101, TrenchFET®
Ampahany : Active
Type FET : P-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 3.9A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 120 mOhm @ 2.8A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8nC @ 4.5V
Vgs (Max) : ±8V
Fampiasana masinina (Ciss) (Max) @ Vds : 425pF @ 10V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 3W (Tc)
Ny mari-pana : -55°C ~ 175°C (TA)
Type Type : Surface Mount
Package Fitaovana mpamatsy : TO-236 (SOT-23)
Famonosana / tranga : TO-236-3, SC-59, SOT-23-3

Mety ho liana koa ianao