Toshiba Semiconductor and Storage - TPC6113(TE85L,F,M)

KEY Part #: K6421262

TPC6113(TE85L,F,M) Vidiny (USD) [410451pcs Stock]

  • 1 pcs$0.09962
  • 3,000 pcs$0.09913

Ampahany:
TPC6113(TE85L,F,M)
Manufacturer:
Toshiba Semiconductor and Storage
Famaritana antsipirihany:
MOSFET P-CH 20V 5A VS6.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Rectifiers Bridge, Diodes - Zener - Iray, Modules maotera mpamily, Transistorio - Bipolar (BJT) - Arrays, Ny kristianao - SCR, Diodes - Miova endrika ny habeny (varicaps, varact, Diode - Mpitaovana - Arrays and Tratrao - TRIACs ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPC6113(TE85L,F,M) Toetran'ny vokatra

Ampahany : TPC6113(TE85L,F,M)
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET P-CH 20V 5A VS6
Series : U-MOSVI
Ampahany : Active
Type FET : P-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 5A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 55 mOhm @ 2.5A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 5V
Vgs (Max) : ±12V
Fampiasana masinina (Ciss) (Max) @ Vds : 690pF @ 10V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 700mW (Ta)
Ny mari-pana : 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : VS-6 (2.9x2.8)
Famonosana / tranga : SOT-23-6 Thin, TSOT-23-6

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