Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N/P-CH 20V 0.8A UF6
Type FET :
N and P-Channel
Fihetsika FET :
Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
800mA
Rds On (Max) @ Id, Vgs :
143 mOhm @ 600MA, 4V
Vgs (th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Fampiasana masinina (Ciss) (Max) @ Vds :
268pF @ 10V
Ny mari-pana :
150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
6-SMD, Flat Leads
Package Fitaovana mpamatsy :
UF6