Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET 2P-CH 20V 4A 2-1Y1A
Type FET :
2 P-Channel (Dual)
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
4A
Rds On (Max) @ Id, Vgs :
45 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
6.74nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds :
480pF @ 10V
Ny mari-pana :
150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
6-WDFN Exposed Pad
Package Fitaovana mpamatsy :
6-UDFN (2x2)