IPG20N10S4L35AATMA1 Vidiny (USD) [182536pcs Stock]
- 1 pcs$0.20263
- 5,000 pcs$0.18591
- Ampahany:
- IPG20N10S4L35AATMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET 2N-CH 8TDSON.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - JFET, Transistors - IGBTs - Tafidina, Transistors - IGBTs - tokan-tena, Transistors - FET, MOSFET - RF, Ny thyristors - DIAC, SIDACs, Tratrao - SCR - Modules and Diodes - Rectifiers Bridge ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPG20N10S4L35AATMA1 electronic components. IPG20N10S4L35AATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N10S4L35AATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPG20N10S4L35AATMA1 Toetran'ny vokatra
Ampahany :
IPG20N10S4L35AATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET 2N-CH 8TDSON
Series :
Automotive, AEC-Q101, OptiMOS™
Ampahany :
Active
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
20A
Rds On (Max) @ Id, Vgs :
35 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs :
17.4nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
1105pF @ 25V
Hery - Max :
43W
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-PowerVDFN
Package Fitaovana mpamatsy :
PG-TDSON-8-10
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