Infineon Technologies - IRLHS6376TR2PBF

KEY Part #: K6523955

[3993pcs Stock]


    Ampahany:
    IRLHS6376TR2PBF
    Manufacturer:
    Infineon Technologies
    Famaritana antsipirihany:
    MOSFET 2N-CH 30V 3.6A PQFN.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Zener - Iray, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Tratrao - TRIACs, Ny kristianao - SCR, Ny thyristors - DIAC, SIDACs, Diode - Mpitaovana - Arrays and Transistor - Tanjona manokana ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Infineon Technologies IRLHS6376TR2PBF electronic components. IRLHS6376TR2PBF can be shipped within 24 hours after order. If you have any demands for IRLHS6376TR2PBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRLHS6376TR2PBF Toetran'ny vokatra

    Ampahany : IRLHS6376TR2PBF
    Manufacturer : Infineon Technologies
    Description : MOSFET 2N-CH 30V 3.6A PQFN
    Series : HEXFET®
    Ampahany : Obsolete
    Type FET : 2 N-Channel (Dual)
    Fihetsika FET : Logic Level Gate
    Drain to Source Voltage (Vdss) : 30V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 3.6A
    Rds On (Max) @ Id, Vgs : 63 mOhm @ 3.4A, 4.5V
    Vgs (th) (Max) @ Id : 1.1V @ 10µA
    Gate Charge (Qg) (Max) @ Vgs : 2.8nC @ 4.5V
    Fampiasana masinina (Ciss) (Max) @ Vds : 270pF @ 25V
    Hery - Max : 1.5W
    Ny mari-pana : -55°C ~ 150°C (TJ)
    Type Type : Surface Mount
    Famonosana / tranga : 6-VDFN Exposed Pad
    Package Fitaovana mpamatsy : 6-PQFN (2x2)