Manufacturer :
Infineon Technologies
Description :
MOSFET N/P-CH 100V 2.1A 8-SOIC
Type FET :
N and P-Channel
Drain to Source Voltage (Vdss) :
100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
2.1A, 1.5A
Rds On (Max) @ Id, Vgs :
210 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
380pF @ 25V
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-SOIC (0.154", 3.90mm Width)
Package Fitaovana mpamatsy :
8-SO