Ampahany :
TPC8014(TE12L,Q,M)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 30V 11A SOP8 2-6J1B
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
11A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
14 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
39nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
1860pF @ 10V
Fandroahana herinaratra (Max) :
1W (Ta)
Ny mari-pana :
150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-SOP (5.5x6.0)
Famonosana / tranga :
8-SOIC (0.173", 4.40mm Width)