Ampahany :
TPC6006-H(TE85L,F)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 40V 3.9A VS6 2-3T1A
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
3.9A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
75 mOhm @ 1.9A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
4.4nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
251pF @ 10V
Fandroahana herinaratra (Max) :
700mW (Ta)
Ny mari-pana :
150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
VS-6 (2.9x2.8)
Famonosana / tranga :
SOT-23-6 Thin, TSOT-23-6