Ampahany :
SI4686DY-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 30V 18.2A 8-SOIC
Series :
TrenchFET®, WFET®
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
18.2A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 13.8A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
1220pF @ 15V
Fandroahana herinaratra (Max) :
3W (Ta), 5.2W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-SO
Famonosana / tranga :
8-SOIC (0.154", 3.90mm Width)