IXYS - IXTD1R4N60P 11

KEY Part #: K6400924

[3229pcs Stock]


    Ampahany:
    IXTD1R4N60P 11
    Manufacturer:
    IXYS
    Famaritana antsipirihany:
    MOSFET N-CH 600V.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Tratrao - TRIACs, Ny kristianao - SCR, Transistors - Bipolar (BJT) - RF, Transistor - FET, MOSFET - Arrays, Transistors - IGBTs - Tafidina, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - Bipolar (BJT) - Single and Diode - Zener - Arrays ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in IXYS IXTD1R4N60P 11 electronic components. IXTD1R4N60P 11 can be shipped within 24 hours after order. If you have any demands for IXTD1R4N60P 11, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXTD1R4N60P 11 Toetran'ny vokatra

    Ampahany : IXTD1R4N60P 11
    Manufacturer : IXYS
    Description : MOSFET N-CH 600V
    Series : PolarHV™
    Ampahany : Obsolete
    Type FET : N-Channel
    teknolojia : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 600V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : 1.4A (Tc)
    Fandefasana fiara (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 9 Ohm @ 700mA, 10V
    Vgs (th) (Max) @ Id : 5.5V @ 25µA
    Gate Charge (Qg) (Max) @ Vgs : 5.2nC @ 10V
    Vgs (Max) : ±30V
    Fampiasana masinina (Ciss) (Max) @ Vds : 140pF @ 25V
    Fihetsika FET : -
    Fandroahana herinaratra (Max) : 50W (Tc)
    Ny mari-pana : -55°C ~ 150°C (TJ)
    Type Type : Surface Mount
    Package Fitaovana mpamatsy : Die
    Famonosana / tranga : Die