Ampahany :
IXTY1R4N60P TRL
Description :
MOSFET N-CH 600V 1.4A D-PAK
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
1.4A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
9 Ohm @ 700mA, 10V
Vgs (th) (Max) @ Id :
5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
5.2nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
140pF @ 25V
Fandroahana herinaratra (Max) :
50W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
TO-252, (D-Pak)
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63