SI4931DY-T1-E3 Vidiny (USD) [195156pcs Stock]
- 1 pcs$0.18953
- 2,500 pcs$0.16019
- Ampahany:
- SI4931DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET 2P-CH 12V 6.7A 8-SOIC.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Diodes - RF, Diode - Mpitaovana - Arrays, Transistors - Bipolar (BJT) - RF, Transistor - Tanjona manokana, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Diodes - Miova endrika ny habeny (varicaps, varact and Diodes - Zener - Iray ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI4931DY-T1-E3 electronic components. SI4931DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4931DY-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4931DY-T1-E3 Toetran'ny vokatra
Ampahany :
SI4931DY-T1-E3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2P-CH 12V 6.7A 8-SOIC
Series :
TrenchFET®
Ampahany :
Active
Type FET :
2 P-Channel (Dual)
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
12V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
6.7A
Rds On (Max) @ Id, Vgs :
18 mOhm @ 8.9A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs :
52nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Hery - Max :
1.1W
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-SOIC (0.154", 3.90mm Width)
Package Fitaovana mpamatsy :
8-SO
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