SIZF916DT-T1-GE3 Vidiny (USD) [120687pcs Stock]
- 1 pcs$0.30647
- Ampahany:
- SIZF916DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH DUAL 30V.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Modules maotera mpamily, Diodes - Mpihazakazaka - Iray, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - Bipolar (BJT) - RF, Transistors - JFET, Ny kristianao - SCR and Transistors - FETs, MOSFETs - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SIZF916DT-T1-GE3 electronic components. SIZF916DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZF916DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZF916DT-T1-GE3 Toetran'ny vokatra
Ampahany :
SIZF916DT-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH DUAL 30V
Series :
TrenchFET® Gen IV
Ampahany :
Active
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Standard
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
23A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs :
4 mOhm @ 10A, 10V, 1.25 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V, 95nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
1060pF @ 15V, 4320pF @ 15V
Hery - Max :
3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-PowerWDFN
Package Fitaovana mpamatsy :
8-PowerPair® (6x5)
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