[13535pcs Stock]
- Ampahany:
- SI7792DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 30V P-PACK SO-8.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Mpitaovana - Arrays, Tratrao - SCR - Modules, Ny kristianao - SCR, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistor - Tanjona manokana, Diodes - Mpihazakazaka - Iray, Diodes - Miova endrika ny habeny (varicaps, varact and Ny thyristors - DIAC, SIDACs ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI7792DP-T1-GE3 electronic components. SI7792DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7792DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7792DP-T1-GE3 Toetran'ny vokatra
Ampahany :
SI7792DP-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 30V P-PACK SO-8
Series :
SkyFET®, TrenchFET® Gen III
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
40.6A (Ta), 60A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.1 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
135nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
4.735nF @ 15V
Fihetsika FET :
Schottky Diode (Body)
Fandroahana herinaratra (Max) :
6.25W (Ta), 104W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PowerPAK® SO-8
Famonosana / tranga :
PowerPAK® SO-8
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