[2619pcs Stock]
- Ampahany:
- GP1M010A080N
- Manufacturer:
- Global Power Technologies Group
- Famaritana antsipirihany:
- MOSFET N-CH 900V 10A TO3PN.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - JFET, Diodes - Miova endrika ny habeny (varicaps, varact, Diodes - Mpihazakazaka - Iray, Transistors - IGBTs - Tafidina, Transistors - FET, MOSFET - RF, Tratrao - TRIACs, Transistors - Bipolar (BJT) - Single, mialoha alik and Diode - Mpitaovana - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Global Power Technologies Group GP1M010A080N electronic components. GP1M010A080N can be shipped within 24 hours after order. If you have any demands for GP1M010A080N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP1M010A080N Toetran'ny vokatra
Ampahany :
GP1M010A080N
Manufacturer :
Global Power Technologies Group
Description :
MOSFET N-CH 900V 10A TO3PN
Series :
-
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
900V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
10A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.05 Ohm @ 5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
53nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
2336pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
312W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
TO-3PN
Famonosana / tranga :
TO-3P-3, SC-65-3
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