SIHG23N60E-GE3 Vidiny (USD) [18087pcs Stock]
- 1 pcs$2.27842
- 10 pcs$2.03383
- 100 pcs$1.66756
- 500 pcs$1.35031
- 1,000 pcs$1.08042
- Ampahany:
- SIHG23N60E-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 600V 23A TO247AC.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Unjunction Programmable, Transistors - FETs, MOSFETs - Single, Diode - Zener - Arrays, Diodes - Mpihazakazaka - Iray, Ny kristianao - SCR, Transistors - IGBTs - Modules, Diode - Mpitaovana - Arrays and Transistors - Bipolar (BJT) - Single, mialoha alik ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SIHG23N60E-GE3 electronic components. SIHG23N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHG23N60E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHG23N60E-GE3 Toetran'ny vokatra
Ampahany :
SIHG23N60E-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 600V 23A TO247AC
Series :
E
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
23A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
158 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
95nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
2418pF @ 100V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
227W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TA)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
TO-247AC
Famonosana / tranga :
TO-247-3
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