Description :
MOSFET N-CH 1000V 1.6A DPAK
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
1.6A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
10 Ohm @ 800mA, 0V
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 5V
Fampiasana masinina (Ciss) (Max) @ Vds :
645pF @ 25V
Fihetsika FET :
Depletion Mode
Fandroahana herinaratra (Max) :
100W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
TO-252, (D-Pak)
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63