APTM60H23FT1G Vidiny (USD) [2511pcs Stock]
- 1 pcs$17.24630
- 100 pcs$17.02655
- Ampahany:
- APTM60H23FT1G
- Manufacturer:
- Microsemi Corporation
- Famaritana antsipirihany:
- MOSFET 4N-CH 600V 20A SP1.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Transistors - JFET, Transistor - Tanjona manokana, Diode - Mpitaovana - Arrays, Transistors - Bipolar (BJT) - Single, Transistor - FET, MOSFET - Arrays, Transistor - Unjunction Programmable and Diodes - Zener - Iray ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Microsemi Corporation APTM60H23FT1G electronic components. APTM60H23FT1G can be shipped within 24 hours after order. If you have any demands for APTM60H23FT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTM60H23FT1G Toetran'ny vokatra
Ampahany :
APTM60H23FT1G
Manufacturer :
Microsemi Corporation
Description :
MOSFET 4N-CH 600V 20A SP1
Series :
-
Ampahany :
Active
Type FET :
4 N-Channel (H-Bridge)
Fihetsika FET :
Standard
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
20A
Rds On (Max) @ Id, Vgs :
276 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
165nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
5316pF @ 25V
Hery - Max :
208W
Ny mari-pana :
-40°C ~ 150°C (TJ)
Type Type :
Chassis Mount
Famonosana / tranga :
SP1
Package Fitaovana mpamatsy :
SP1
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