SQJ968EP-T1_GE3 Vidiny (USD) [178202pcs Stock]
- 1 pcs$0.20756
- 3,000 pcs$0.17541
- Ampahany:
- SQJ968EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET 2 N-CH 60V POWERPAK SO8.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Tafidina, Diodes - RF, Diodes - Zener - Iray, Tratrao - TRIACs, Transistors - IGBTs - Modules, Transistors - FET, MOSFET - RF and Transistors - JFET ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SQJ968EP-T1_GE3 electronic components. SQJ968EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ968EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ968EP-T1_GE3 Toetran'ny vokatra
Ampahany :
SQJ968EP-T1_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2 N-CH 60V POWERPAK SO8
Series :
Automotive, AEC-Q101, TrenchFET®
Ampahany :
Active
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Standard
Drain to Source Voltage (Vdss) :
60V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
23.5A (Tc)
Rds On (Max) @ Id, Vgs :
33.6 mOhm @ 4.8A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
18.5nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
714pF @ 30V
Hery - Max :
42W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TA)
Type Type :
Surface Mount
Famonosana / tranga :
PowerPAK® SO-8 Dual
Package Fitaovana mpamatsy :
PowerPAK® SO-8 Dual
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