SIRA10BDP-T1-GE3 Vidiny (USD) [274892pcs Stock]
- 1 pcs$0.13455
- Ampahany:
- SIRA10BDP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CHAN 30V.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Zener - Arrays, Diodes - RF, Transistorio - Bipolar (BJT) - Arrays, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - FETs, MOSFETs - Single, Transistor - FET, MOSFET - Arrays, Ny thyristors - DIAC, SIDACs and Transistors - IGBTs - tokan-tena ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SIRA10BDP-T1-GE3 electronic components. SIRA10BDP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIRA10BDP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIRA10BDP-T1-GE3 Toetran'ny vokatra
Ampahany :
SIRA10BDP-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CHAN 30V
Series :
TrenchFET® Gen IV
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
30A (Ta), 60A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.6 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
36.2nC @ 10V
Vgs (Max) :
+20V, -16V
Fampiasana masinina (Ciss) (Max) @ Vds :
1710pF @ 15V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
5W (Ta), 43W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PowerPAK® SO-8
Famonosana / tranga :
PowerPAK® SO-8
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