TPN4R712MD,L1Q Vidiny (USD) [342569pcs Stock]
- 1 pcs$0.11510
- 5,000 pcs$0.11453
- Ampahany:
- TPN4R712MD,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Famaritana antsipirihany:
- MOSFET P-CH 20V 36A 8TSON ADV.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Mpitaovana - Arrays, Transistor - Unjunction Programmable, Diodes - Zener - Iray, Transistor - Tanjona manokana, Diode - Zener - Arrays, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistor - FET, MOSFET - Arrays and Transistors - Bipolar (BJT) - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Toshiba Semiconductor and Storage TPN4R712MD,L1Q electronic components. TPN4R712MD,L1Q can be shipped within 24 hours after order. If you have any demands for TPN4R712MD,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN4R712MD,L1Q Toetran'ny vokatra
Ampahany :
TPN4R712MD,L1Q
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET P-CH 20V 36A 8TSON ADV
Series :
U-MOSVI
Ampahany :
Active
Type FET :
P-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
36A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
4.7 mOhm @ 18A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 5V
Vgs (Max) :
±12V
Fampiasana masinina (Ciss) (Max) @ Vds :
4300pF @ 10V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
42W (Tc)
Ny mari-pana :
150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-TSON Advance (3.3x3.3)
Famonosana / tranga :
8-PowerVDFN
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