TSM061NA03CV RGG Vidiny (USD) [194697pcs Stock]
- 1 pcs$0.18997
- Ampahany:
- TSM061NA03CV RGG
- Manufacturer:
- Taiwan Semiconductor Corporation
- Famaritana antsipirihany:
- MOSFET N-CH 30V 66A 8PDFN.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Tratrao - TRIACs, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Transistor - Tanjona manokana, Transistors - JFET and Diodes - Zener - Iray ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Taiwan Semiconductor Corporation TSM061NA03CV RGG electronic components. TSM061NA03CV RGG can be shipped within 24 hours after order. If you have any demands for TSM061NA03CV RGG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM061NA03CV RGG Toetran'ny vokatra
Ampahany :
TSM061NA03CV RGG
Manufacturer :
Taiwan Semiconductor Corporation
Description :
MOSFET N-CH 30V 66A 8PDFN
Series :
-
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
66A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
6.1 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
19.3nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
1136pF @ 15V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
44.6W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-PDFN (3x3)
Famonosana / tranga :
8-PowerWDFN
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