[3851pcs Stock]
- Ampahany:
- SI7960DP-T1-E3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET 2N-CH 60V 6.2A PPAK SO-8.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - tokan-tena, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistorio - Bipolar (BJT) - Arrays, Diodes - Rectifiers Bridge, Diodes - Miova endrika ny habeny (varicaps, varact, Diodes - Zener - Iray and Transistors - Bipolar (BJT) - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI7960DP-T1-E3 electronic components. SI7960DP-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7960DP-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7960DP-T1-E3 Toetran'ny vokatra
Ampahany :
SI7960DP-T1-E3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2N-CH 60V 6.2A PPAK SO-8
Series :
TrenchFET®
Ampahany :
Obsolete
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
60V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
6.2A
Rds On (Max) @ Id, Vgs :
21 mOhm @ 9.7A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
75nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Hery - Max :
1.4W
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
PowerPAK® SO-8 Dual
Package Fitaovana mpamatsy :
PowerPAK® SO-8 Dual
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