SIZ926DT-T1-GE3 Vidiny (USD) [162374pcs Stock]
- 1 pcs$0.22893
- 3,000 pcs$0.22779
- Ampahany:
- SIZ926DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET 2 N-CH 25V 8-POWERPAIR.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Miova endrika ny habeny (varicaps, varact, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistorio - Bipolar (BJT) - Arrays, Ny thyristors - DIAC, SIDACs, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, mialoha alik, Diodes - Rectifiers Bridge and Transistors - Bipolar (BJT) - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SIZ926DT-T1-GE3 electronic components. SIZ926DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ926DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ926DT-T1-GE3 Toetran'ny vokatra
Ampahany :
SIZ926DT-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2 N-CH 25V 8-POWERPAIR
Series :
TrenchFET® Gen IV
Ampahany :
Active
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Standard
Drain to Source Voltage (Vdss) :
25V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
40A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs :
4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V, 41nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
925pF @ 10V, 2150pF @ 10V
Hery - Max :
20.2W, 40W
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-PowerWDFN
Package Fitaovana mpamatsy :
8-PowerPair® (6x5)
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