SQJB68EP-T1_GE3 Vidiny (USD) [219327pcs Stock]
- 1 pcs$0.16864
- Ampahany:
- SQJB68EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET 2 N-CH 100V POWERPAK SO8.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Tratrao - TRIACs, Transistor - Unjunction Programmable, Modules maotera mpamily, Transistors - IGBTs - Modules, Diode - Zener - Arrays, Diodes - Mpihazakazaka - Iray, Transistors - Bipolar (BJT) - Single, mialoha alik and Tratrao - SCR - Modules ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SQJB68EP-T1_GE3 electronic components. SQJB68EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJB68EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJB68EP-T1_GE3 Toetran'ny vokatra
Ampahany :
SQJB68EP-T1_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2 N-CH 100V POWERPAK SO8
Series :
Automotive, AEC-Q101, TrenchFET®
Ampahany :
Active
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Standard
Drain to Source Voltage (Vdss) :
100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
11A (Tc)
Rds On (Max) @ Id, Vgs :
92 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
280pF @ 25V
Hery - Max :
27W
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
PowerPAK® SO-8 Dual
Package Fitaovana mpamatsy :
PowerPAK® SO-8 Dual
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