BSG0810NDIATMA1 Vidiny (USD) [83416pcs Stock]
- 1 pcs$0.46874
- 5,000 pcs$0.46121
- Ampahany:
- BSG0810NDIATMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET 2N-CH 25V 19A/39A 8TISON.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Miova endrika ny habeny (varicaps, varact, Transistor - Tanjona manokana, Diodes - Mpihazakazaka - Iray, Transistors - JFET, Ny thyristors - DIAC, SIDACs, Transistor - Unjunction Programmable, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - tokan-tena ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies BSG0810NDIATMA1 electronic components. BSG0810NDIATMA1 can be shipped within 24 hours after order. If you have any demands for BSG0810NDIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSG0810NDIATMA1 Toetran'ny vokatra
Ampahany :
BSG0810NDIATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET 2N-CH 25V 19A/39A 8TISON
Series :
OptiMOS™
Ampahany :
Active
Type FET :
2 N-Channel (Dual) Asymmetrical
Fihetsika FET :
Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) :
25V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
19A, 39A
Rds On (Max) @ Id, Vgs :
3 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8.4nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds :
1040pF @ 12V
Hery - Max :
2.5W
Ny mari-pana :
-55°C ~ 155°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-PowerTDFN
Package Fitaovana mpamatsy :
PG-TISON-8
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