[3460pcs Stock]
- Ampahany:
- PHD23NQ10T,118
- Manufacturer:
- NXP USA Inc.
- Famaritana antsipirihany:
- MOSFET N-CH 100V 23A DPAK.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Diode - Mpitaovana - Arrays, Transistors - Bipolar (BJT) - Single, mialoha alik, Diodes - RF, Transistorio - Bipolar (BJT) - Arrays, Modules maotera mpamily, Transistors - IGBTs - tokan-tena and Transistors - IGBTs - Modules ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in NXP USA Inc. PHD23NQ10T,118 electronic components. PHD23NQ10T,118 can be shipped within 24 hours after order. If you have any demands for PHD23NQ10T,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHD23NQ10T,118 Toetran'ny vokatra
Ampahany :
PHD23NQ10T,118
Manufacturer :
NXP USA Inc.
Description :
MOSFET N-CH 100V 23A DPAK
Series :
TrenchMOS™
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
23A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
70 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
1187pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
100W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
DPAK
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63
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