Vishay Siliconix - SI7212DN-T1-E3

KEY Part #: K6525113

SI7212DN-T1-E3 Vidiny (USD) [68608pcs Stock]

  • 1 pcs$0.56991
  • 3,000 pcs$0.53396

Ampahany:
SI7212DN-T1-E3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET 2N-CH 30V 4.9A 1212-8.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - FET, MOSFET - Arrays, Transistors - Bipolar (BJT) - RF, Diode - Mpitaovana - Arrays, Ny kristianao - SCR, Diodes - Rectifiers Bridge, Transistors - Bipolar (BJT) - Single, Diodes - Mpihazakazaka - Iray and Transistorio - Bipolar (BJT) - Arrays, mialoha ali ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Siliconix SI7212DN-T1-E3 electronic components. SI7212DN-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7212DN-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7212DN-T1-E3 Toetran'ny vokatra

Ampahany : SI7212DN-T1-E3
Manufacturer : Vishay Siliconix
Description : MOSFET 2N-CH 30V 4.9A 1212-8
Series : -
Ampahany : Active
Type FET : 2 N-Channel (Dual)
Fihetsika FET : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 4.9A
Rds On (Max) @ Id, Vgs : 36 mOhm @ 6.8A, 10V
Vgs (th) (Max) @ Id : 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds : -
Hery - Max : 1.3W
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Famonosana / tranga : PowerPAK® 1212-8 Dual
Package Fitaovana mpamatsy : PowerPAK® 1212-8 Dual