Infineon Technologies - IPB80P04P4L06ATMA1

KEY Part #: K6419489

IPB80P04P4L06ATMA1 Vidiny (USD) [114518pcs Stock]

  • 1 pcs$0.32298
  • 1,000 pcs$0.30652

Ampahany:
IPB80P04P4L06ATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET P-CH TO263-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - JFET, Diodes - Zener - Iray, Transistors - IGBTs - tokan-tena, Transistors - IGBTs - Tafidina, Diodes - RF, Diodes - Rectifiers Bridge and Transistorio - Bipolar (BJT) - Arrays ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB80P04P4L06ATMA1 Toetran'ny vokatra

Ampahany : IPB80P04P4L06ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET P-CH TO263-3
Series : Automotive, AEC-Q101, OptiMOS™
Ampahany : Active
Type FET : P-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 80A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.4 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs : 104nC @ 10V
Vgs (Max) : ±16V
Fampiasana masinina (Ciss) (Max) @ Vds : 6580pF @ 25V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 88W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-TO263-3-2
Famonosana / tranga : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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