Ampahany :
TJ60S04M3L(T6L1,NQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET P-CH 40V 60A DPAK-3
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
60A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
6.3 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
125nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
6510pF @ 10V
Fandroahana herinaratra (Max) :
90W (Tc)
Ny mari-pana :
175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
DPAK+
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63