IXTY1R4N120PHV Vidiny (USD) [41564pcs Stock]
- 1 pcs$0.94072
- Ampahany:
- IXTY1R4N120PHV
- Manufacturer:
- IXYS
- Famaritana antsipirihany:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - RF, Transistor - FET, MOSFET - Arrays, Diode - Mpitaovana - Arrays, Diodes - Mpihazakazaka - Iray, Transistors - IGBTs - Modules, Transistor - Tanjona manokana, Transistors - IGBTs - tokan-tena and Transistorio - Bipolar (BJT) - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in IXYS IXTY1R4N120PHV electronic components. IXTY1R4N120PHV can be shipped within 24 hours after order. If you have any demands for IXTY1R4N120PHV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTY1R4N120PHV Toetran'ny vokatra
Ampahany :
IXTY1R4N120PHV
Manufacturer :
IXYS
Description :
MOSFET N-CH
Series :
Polar™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
1.4A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
13 Ohm @ 700mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
24.8nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
666pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
86W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
TO-252
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63
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