IPW60R190E6FKSA1 Vidiny (USD) [22533pcs Stock]
- 1 pcs$1.82891
- Ampahany:
- IPW60R190E6FKSA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 600V 20.2A TO247.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Tratrao - TRIACs, Ny thyristors - DIAC, SIDACs, Transistors - FETs, MOSFETs - Single, Tratrao - SCR - Modules, Diodes - Miova endrika ny habeny (varicaps, varact and Transistors - Bipolar (BJT) - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPW60R190E6FKSA1 electronic components. IPW60R190E6FKSA1 can be shipped within 24 hours after order. If you have any demands for IPW60R190E6FKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPW60R190E6FKSA1 Toetran'ny vokatra
Ampahany :
IPW60R190E6FKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 600V 20.2A TO247
Series :
CoolMOS™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
20.2A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 9.5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs :
63nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
1400pF @ 100V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
151W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
PG-TO247-3
Famonosana / tranga :
TO-247-3
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