Ampahany :
TPH4R10ANL,L1Q
Manufacturer :
Toshiba Semiconductor and Storage
Description :
X35 PB-F POWER MOSFET TRANSISTOR
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
92A (Ta), 70A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.1 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
75nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
6.3nF @ 50V
Fandroahana herinaratra (Max) :
2.5W (Ta), 67W (Tc)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
8-SOP Advance (5x5)
Famonosana / tranga :
8-PowerVDFN