IRFB812PBF Vidiny (USD) [188931pcs Stock]
- 1 pcs$0.19577
- 1,000 pcs$0.18794
- Ampahany:
- IRFB812PBF
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N CH 500V 3.6A TO220AB.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - tokan-tena, Transistors - FETs, MOSFETs - Single, Transistor - Tanjona manokana, Diodes - Miova endrika ny habeny (varicaps, varact, Transistorio - Bipolar (BJT) - Arrays, Diodes - Mpihazakazaka - Iray and Diode - Zener - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IRFB812PBF electronic components. IRFB812PBF can be shipped within 24 hours after order. If you have any demands for IRFB812PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB812PBF Toetran'ny vokatra
Ampahany :
IRFB812PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N CH 500V 3.6A TO220AB
Series :
HEXFET®
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
3.6A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.2 Ohm @ 2.2A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
810pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
78W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
TO-220AB
Famonosana / tranga :
TO-220-3
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